On Ultrasonic Cleaning Technology for Silicon Wafers
2021-09-10
In the preparation process of semiconductor materials, every single step involves cleaning, and the quality of cleaning directly affects the subsequent processing steps—and even impacts the yield and reliability of the finished devices. Due to the rapid increase in ULSI integration density and the shrinking dimensions of devices, the requirements for wafer surface cleanliness have become increasingly stringent. ULSI processes demand that the substrate wafers provided should have no more than 500 particles/m² × 0.12 μm, and metal contamination must be less than 10¹⁰ atoms/cm². Any potential contamination present at each stage of wafer fabrication can lead to defect formation and device failure. Therefore, wafer cleaning has attracted considerable attention from professionals. Previously, many manufacturers relied on manual washing methods, which involved significant human intervention. On the one hand, this approach was prone to generating debris, thereby reducing economic efficiency; on the other hand, manually cleaned wafers often exhibited poor surface cleanliness and severe contamination, resulting in a lower pass rate during the subsequent chemical polishing and etching processes. Consequently, wafer cleaning technology has come under intense scrutiny, and finding a simple and effective cleaning method has become an urgent priority. A specialized technique—ultrasonic cleaning—has been introduced, demonstrating remarkable effectiveness in cleaning silicon wafers and representing a promising cleaning technology worthy of wider adoption.
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